TIP112 PDF

ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in. Bipolar (BJT) Transistor NPN – Darlington V 2A 2W Through Hole TO Bipolar (BJT) Transistor NPN – Darlington V 2A 2W Through Hole TOAB.

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TIP Datasheet, Equivalent, Cross Reference Search. Transistor Catalog

The product does not contain any of the restricted substances in concentrations and applications banned by the Directive, and for components, the product is capable of being worked on at the higher temperatures required by lead—free soldering. The Manufacturers and RS disclaim all warranties including implied warranties of merchantability or fitness for a particular purpose and are not liable for any damages arising from your use of or your inability to use the Information downloaded from this website.

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The product detailed below complies with the specifications published by RS Components. Maximum Collector Emitter Saturation Voltage. They are intented for use in medium power linear and switching applications.

The foregoing information relates to product sold on, or after, the date shown below. The Manufacturers and RS reserve the right to change this Information at any time without notice.

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Product is in design stage Target: Not Recommended for New Design. Thank you for your feedback. Cloud Components and Modules. Resources Technical Documentation Product Specifications. Product is in volume production 0. South America Argentina Brazil. Complementary silicon power Darlington transistors.

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TIP112 Bipolar Transistor

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